Blistering of H-implanted GaN
نویسندگان
چکیده
Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and ‘‘etching’’ of GaN using high-dose implantation with H ions. © 2002 American Institute of Physics. @DOI: 10.1063/1.1430533#
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